| PART |
Description |
Maker |
| GMR30H150CTPF3T GMR30H150C GMR30H150CTA3R GMR30H15 |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIE
|
GAMMA[Gamma Microelectronics Inc.]
|
| GM76C256CW GM76C256CLLT-55W |
x8|2.7~5.5V|55/70/85/100/120|Low Power Slow SRAM - 256K x8 | 2.75.5V的| 55/70/85/100/120 |低功耗SRAM的速度 256K
32K X 8 STANDARD SRAM, 120 ns, PDSO28
|
TE Connectivity, Ltd.
HYNIX SEMICONDUCTOR INC
|
| SD275SCU100B |
SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage 200∑C Operating Temperature 120 A, SILICON, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| BAV201 |
0.25 A, 120 V, SILICON, SIGNAL DIODE
|
LITE-ON SEMICONDUCTOR CORP
|
| YG855C12R |
120 V, SILICON, RECTIFIER DIODE
|
FUJI ELECTRIC CO LTD
|
| SPD165611R |
120 A, SILICON, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| BAV301P |
0.25 A, 120 V, SILICON, SIGNAL DIODE
|
MICRO COMMERCIAL COMPONENTS
|
| BAV201-GS08 BAV203-GS08 |
0.25 A, 120 V, SILICON, SIGNAL DIODE, DO-213AA
|
VISHAY SEMICONDUCTORS
|
| MJ11029 MJ11031 MJ11028 MJ11030 MJ11033 ON1976 MJ1 |
50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS
From old datasheet system
50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60-120 VOLTS 300 WATTS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| EPS13D2C1HG-120.000M |
OSCILLATORS 100PPM -20 70 3.3V 4 120.000MHZ TS CMOS 5X7MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 120 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| EH3525ETTS-120.000M |
OSCILLATORS 25PPM -40 85 5.0V 4 120.000MHZ TS CMOS 5.0X3.2MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 120 MHz, HCMOS/TTL OUTPUT
|
Ecliptek, Corp.
|
